Depth profiling of GaN by cathodoluminescence microanalysis
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123460
Reference14 articles.
1. Group III nitride semiconductors for short wavelength light-emitting devices
2. Gallium vacancies and the yellow luminescence in GaN
3. Point-defect complexes and broadband luminescence in GaN and AlN
4. Towards the Identification of the Dominant Donor in GaN
5. Observation of Native Ga Vacancies in GaN by Positron Annihilation
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