MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. III-N-V low-bandgap nitrides and their device applications
2. GaInNAs: a novel material for long-wavelength semiconductor lasers
3. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m
4. 1.3 [micro sign]m InGaAsN vertical cavity surface emitting lasers grown by MOCVD
5. Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Long-wavelength VCSEL with integrated relief for control of singlemode emission;Optics Communications;2006-11
2. Hybrid 1285 nm GaInNAs VCSELs with 1.2 mW singlemode output power at 85 °C;Semiconductor Science and Technology;2006-09-11
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