Long-wavelength VCSEL with integrated relief for control of singlemode emission-Reference-Cited by-同舟云学术

Long-wavelength VCSEL with integrated relief for control of singlemode emission

Published:2006-11 Issue:2 Volume:267 Page:447-450
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Supper D.,Pfeiffer J.,Ilzhöfer M.,Giuliani Ch.,Degen Ch.,Lima A.P.,Ramakrishnan A.,Ebbinghaus G.,Steinle G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. High-performance single-mode VCSELs in the 1310-nm waveband

2. G. Steinle, H.D. Wolf, M. Popp, A. Yu. Egorov, G. Kristen, H. Riechert, in: Conference paper 51st Electronic Components and Technologie Conference, Lake Buena Vista, 2001.

3. 1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

4. MOCVD growth of highly strained 1.3 μm InGaAs:Sb/GaAs vertical cavity surface emitting laser

5. M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, J. Roßkopf, G. Steinle, Ch. Degen, M.-C. Amann, in: Proceedings of the 27th European Conference on Optics Communications, ECOC ’01, vol. 6, Amsterdam, The Netherlands, September/October 2001, p. 44.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Relief Aperture on Single-Fundamental-Mode Emission of 1.3-$\mu $ m GaInNAs GaAs-Based VCSELs;IEEE Journal of Quantum Electronics;2014-11

2. Inverted-relief cavity used in VCSELs to suppress higher-order transverse modes;Photonics Letters of Poland;2014-03-31

3. 1.3-$\mu$m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process;IEEE Photonics Technology Letters;2011-01

4. VCSEL structures used to suppress higher-order transverse modes;Opto-Electronics Review;2011-01-01

5. Fiber Optic Communications: A Review;Optical Networks;2009