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Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method

  • Published:2005-07 Issue:1 Volume:281 Page:11-16
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Boćkowski M.,Grzegory I.,Borysiuk J.,Kamler G.,Łucznik B.,Wróblewski M.,Kwiatkowski P.,Jasik K.,Krukowski S.,Porowski S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Analysis of Plasma Pretreated Sapphire Substrate for Aluminum Nitride Buffer Layer;Korean Journal of Materials Research;2017-12-31

2. Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03

3. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates;Journal of Crystal Growth;2016-12

4. Influence of Nano Abrasive on Chemical Mechanical Ultra-Precision Machining of Sapphire Substrate Surfaces;Key Engineering Materials;2014-04

5. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12
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