Growth of epitaxial γ-Al2O3(111) films with smooth surfaces on chemically oxidized Si(111) substrates using an Al–N2O mixed source molecular beam epitaxy-Reference-Cited by-同舟云学术

Growth of epitaxial γ-Al2O3(111) films with smooth surfaces on chemically oxidized Si(111) substrates using an Al–N2O mixed source molecular beam epitaxy

Published:2006-04 Issue:1 Volume:290 Page:91-95
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Okada Takayuki,Ito Mikinori,Sawada Kazuaki,Ishida Makoto

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories

2. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

3. Effects on surface morphology of epitaxial Y2O3 layers on Si (001) after postgrowth annealing

4. The Interface between Single Crystalline (001) LaAlO3and (001) Silicon

5. Epitaxial Al2O3films on Si by low‐pressure chemical vapor deposition

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