Characterization of bulk grown GaN and AlN single crystal materials-Reference-Cited by-同舟云学术

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Characterization of bulk grown GaN and AlN single crystal materials

Published:2006-01 Issue:2 Volume:287 Page:349-353
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Raghothamachar Balaji,Bai Jie,Dudley Michael,Dalmau Rafael,Zhuang Dejin,Herro Ziad,Schlesser Raoul,Sitar Zlatko,Wang Buguo,Callahan Michael,Rakes Kelly,Konkapaka Phanikumar,Spencer Michael

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Growth of high purity AlN crystals

2. Report on the growth of bulk aluminum nitride and subsequent substrate preparation

3. Sublimation growth and characterization of bulk aluminum nitride single crystals

4. P. Konkapaka, et. al., J. Crystal Growth, accepted.

5. High pressure growth of GaN — new prospects for blue lasers

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1. РЕНТГЕНОВСКАЯ ДИФРАКЦИОННАЯ ТОПОГРАФИЯ (ОБЗОР);2020-05-22

2. Heat, mass, and crystal growth of GaN in the ammonothermal process: A numerical study;Numerical Heat Transfer, Part A: Applications;2016-08-17

3. Growth and Properties of Bulk AlN Substrates;III-Nitride Ultraviolet Emitters;2015-11-13

4. Vapor Transport Growth of Wide Bandgap Materials;Handbook of Crystal Growth;2015

5. GaN-based substrates and optoelectronic materials and devices;Chinese Science Bulletin;2014-03-01

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