Epitaxial growth of Er2O3 films on Si(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters
2. Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer
3. Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si
4. High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide
5. Band offsets of wide-band-gap oxides and implications for future electronic devices
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1. Low-loss erbium-incorporated rare-earth oxide waveguides on Si with bound states in the continuum and the large optical signal enhancement in them;Optics Express;2021-11-29
2. Impact of deposition temperature on microstructure and properties of erbium oxide antireflective films deposited on CVD diamond substrates;Vacuum;2021-11
3. Microstructure, hardness and optical properties of Er2O3 films deposited on diamond-coated and Si(100) substrates by radio frequency magnetron sputtering;Thin Solid Films;2020-09
4. Temperature Dependence of the Stark Shifts of Er3+ Transitions in Er2O3 Thin Films on Si(001);Journal of the Korean Physical Society;2020-06
5. Epitaxial single-crystal rare-earth oxide in horizontal slot waveguide for silicon-based integrated active photonic devices;Optics Express;2020-04-28
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