Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1483379
Reference19 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
3. Crystalline Oxides on Silicon: The First Five Monolayers
4. Epitaxial oxide thin films on Si(001)
5. Band offsets of wide-band-gap oxides and implications for future electronic devices
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