Incorporation of carbon on a facet of GaN by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. GaInN/GaN multiple quantum wells green LEDs
4. Optical Properties of Strained AlGaN and GaInN on GaN
5. Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors
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1. Analysis of trimethylgallium decomposition by high-resolution mass spectrometry;Japanese Journal of Applied Physics;2020-02-01
2. Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates;APL Materials;2017-01
3. Precursors for carbon doping of GaN in chemical vapor deposition;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03
4. Selective growth and impurity incorporation in semipolar GaN grown on Si substrate;SPIE Proceedings;2010-02-11
5. Maskless selective growth of semi-polar (112¯2) GaN on Si (311) substrate by metal organic vapor phase epitaxy;Journal of Crystal Growth;2009-05
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