Analysis of trimethylgallium decomposition by high-resolution mass spectrometry
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab6fb0/pdf
Reference27 articles.
1. Development and current status of organometallic vapor phase epitaxy
2. First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN
3. Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2
4. Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs
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2. Comparison of triethylgallium and diethylgallium ethoxide for β-Ga2O3 growth by metalorganic vapor phase epitaxy;Journal of Vacuum Science & Technology A;2023-06-01
3. Mass spectrometric study of β-Ga2O3 growth process by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2023-04-12
4. Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy;Applied Physics Letters;2022-10-17
5. Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE;Crystal Growth & Design;2021-02-01
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