Maskless selective growth of semi-polar (112¯2) GaN on Si (311) substrate by metal organic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Substrates for gallium nitride epitaxy
2. Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate
3. Growth of () GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE
4. Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate
5. Mg doping in (11¯01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE
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1. Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD;Semiconductor Science and Technology;2023-02-06
2. Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate;ST PETER POLY U J-PH;2023
3. Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress;Materials Today;2021-10
4. Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method;Semiconductor Science and Technology;2019-03-15
5. Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates;Gallium Nitride Materials and Devices XIII;2018-02-23
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