Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications-Reference-Cited by-同舟云学术

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Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications

Published:2015-06 Issue: Volume:420 Page:64-73
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ho Jian-Wei,Tan Rayson J.N.,Heuken Michael,Tay Andrew A.O.,Chua Soo-Jin

Funder

National University of Singapore

A*STAR

Solar Energy Research Institute of Singapore (SERIS)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference63 articles.

1. Superior radiation resistance of In1−xGaxN alloys: full-solar-spectrum photovoltaic material system;Wu;J. Appl. Phys.,2003

2. Structure and electronic properties of InN and In-rich group III-nitride alloys;Walukiewicz;J. Phys. D: Appl. Phys.,2006

3. Small band gap bowing in In1−xGaxN alloys;Wu;Appl. Phys. Lett.,2002

4. RF-molecular beam epitaxy growth and properties of InN and related alloys;Nanishi;Jpn. J. Appl. Phys.,2003

5. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition;Singh;Appl. Phys. Lett.,1997

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N2/H2 plasma;Journal of Vacuum Science & Technology A;2021-03

2. Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates;Nanotechnology;2017-04-19

3. Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates;Optical Materials Express;2017-01-06

4. Glancing angle deposition of Fe triangular nanoprisms consisting of vertically-layered nanoplates;Journal of Crystal Growth;2016-10

5. Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates;Applied Physics Letters;2015-09-14

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