High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity
Author:
Funder
EU
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. InP based lasers and optical amplifiers with wire-/dot-like active regions
2. Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots
3. High-Speed Low-Noise InAs/InAlGaAs/InP 1.55-$\mu{\rm m}$ Quantum-Dot Lasers
4. High gain 1.55 μm diode lasers based on InAs quantum dot like active regions
5. Long-wavelength InP-based quantum-dash lasers
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1. Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon Substrates;ACS Applied Materials & Interfaces;2024-09-13
2. Homogeneous Array of Nanopits on the Surface of InAlAs Layers Grown by Molecular Beam Epitaxy on an InP (001) Substrate;Optoelectronics, Instrumentation and Data Processing;2024-04
3. InAs quantum dots with a narrow photoluminescence linewidth for a lower threshold current density in 1.55 µm lasers;Optical Materials Express;2024-03-28
4. Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties;Crystals;2023-09-08
5. InP-based quantum dot lasers emitting at 1.3 µm;Journal of Crystal Growth;2023-09
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