Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4825106
Reference26 articles.
1. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1directly modulated lasers and 40 Gb s−1signal-regenerative amplifiers
2. Self-organized growth of quantum-dot structures
3. Strained coherent InAs quantum box islands on GaAs(100): Size equalization, vertical self-organization, and optical properties
4. Structural and optical properties of self-assembled InGaAs quantum dots
5. Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures
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1. Hole Spin Coherence in InAs/InAlGaAs Self‐Assembled Quantum Dots Emitting at Telecom Wavelengths;physica status solidi (b);2024-09-02
2. Migration barriers for diffusion of As and P atoms in InP and InAs via vacancies and interstitial atoms;Acta Materialia;2024-05
3. Telecom‐Band Quantum Dots Compatible with Silicon Photonics for Photonic Quantum Applications;Advanced Quantum Technologies;2024-02-26
4. Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity;Scientific Reports;2024-02-23
5. Polarized and Bright Telecom C-Band Single-Photon Source from InP-Based Quantum Dots Coupled to Elliptical Bragg Gratings;Nano Letters;2024-01-29
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