GaN growth on Si with rare-earth oxide distributed Bragg reflector structures
Author:
Funder
European Community׳s Social Foundation
Rytis Dargis
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. GaN-based epitaxy on silicon: stress measurements
2. Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)
3. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology
4. Structural and Thermal Properties of Single Crystalline Epitaxial Gd2O3and Er2O3Grown on Si(111)
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2. Single‐Crystal Multilayer Nitride, Metal, and Oxide Structures on Engineered Silicon for New‐Generation Radio Frequency Filter Applications;physica status solidi (a);2020-01-21
3. Anisotropic properties of pipe-GaN distributed Bragg reflectors;Nanoscale Advances;2020
4. Growth conditions of semi and non-polar GaN on Si with Er2O3 buffer layer;Journal of Alloys and Compounds;2017-11
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