Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue ® MOCVD platform
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
2. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
3. Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon
4. Polarities of GaN films and 3C-SiC intermediate layers grown on (111) Si substrates by MOVPE
5. MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices
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3. Study of AlN growth using AMEC Prismo HiT3 MOCVD reactor;Journal of Crystal Growth;2024-01
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