Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM-Reference-Cited by-同舟云学术

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Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM

Published:2016-01 Issue: Volume:433 Page:89-96
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Knaub Nikolai,Beyer Andreas,Wegele Tatjana,Ludewig Peter,Volz Kerstin

Funder

German Science Foundation

European Union Project BIANCHO

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Band gap of GaAs1−xBix, 0;Francoeur;Appl. Phys. Lett.,2003

2. Valence band anticrossing in GaBixAs1−x;Alberi;Appl. Phys. Lett.,2007

3. Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells;Imhof;Semicond. Sci. Technol.,2008

4. Band engineering in dilute nitride and bismide semiconductor lasers;Broderick;Semicond. Sci. Technol.,2012

5. Luminescence dynamics in Ga(AsBi);Imhof;Appl. Phys. Lett.,2011

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