Coincident site lattice bi-crystals growth—Impurity segregation towards grain boundaries-Reference-Cited by-同舟云学术

Coincident site lattice bi-crystals growth—Impurity segregation towards grain boundaries

Published:2015-04 Issue: Volume:416 Page:8-11
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Autruffe Antoine,Vines Lasse,Arnberg Lars,Di Sabatino Marisa

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

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4. Impact of growth rate on impurities segregation at grain boundaries in silicon during Bridgman growth;Autruffe;J. Cryst. Growth,2013

5. Identification of grain boundary segregation mechanisms during silicon bi-crystal solidification;Autruffe;Mater. Sci. Forum.,2014

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1. The nature of a low angle grain boundary in a Si bi-crystal with added Fe impurities;Acta Materialia;2023-06

2. Attempt to correlate dislocations network and distribution to macroscale plane rotations in <001> cast-mono ingots;Solar Energy Materials and Solar Cells;2023-01

3. X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation;Crystals;2020-06-30

4. Carbon segregation at Σ3 {1 1 2} grain boundaries in silicon;Computational Materials Science;2018-02

5. Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies;Materials Science in Semiconductor Processing;2017-08