Carbon segregation at Σ3 {1 1 2} grain boundaries in silicon
Author:
Funder
FRINATEK
Publisher
Elsevier BV
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
Reference42 articles.
1. Interactions of twin boundaries with intrinsic point defects and carbon in silicon;Käshammer;J. Appl. Phys.,2013
2. Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography;Stoffers;Prog. Photovolt: Res. Appl.,2015
3. A mechanistic study of impurity segregation at silicon grain boundaries;Käshammer;J. Appl. Phys.,2015
4. Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals;Ohno;Appl. Phys. Lett.,2015
5. The five parameter grain boundary character distribution of polycrystalline silicon;Ratanaphan;J. Mater. Sci.,2014
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