Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

Published:2016-01 Issue: Volume:434 Page:25-29
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lekhal Kaddour,Hussain Sakhawat,De Mierry Philippe,Vennéguès Philippe,Nemoz Maud,Chauveau Jean-Michel,Damilano Benjamin

Funder

French Agency

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. The Blue Laser Diode;Nakamura,1997

2. Recent progress in group-III nitride light-emitting diodes

3. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

4. Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells

5. Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well

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1. Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission;Semiconductor Physics, Quantum Electronics and Optoelectronics;2023-06-26

2. Study on the luminescence mechanism influenced by the inhomogeneous growth of InGaN/GaN multiple quantum wells;Results in Physics;2023-03

3. Modeling of In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN light emitting diode structure on ScAlMgO4 (0001) substrate for high intensity red emission;Semiconductor Physics, Quantum Electronics and Optoelectronics;2020-11-19

4. Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer;Scientific Reports;2019-03-05

5. Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer;Journal of Materials Science: Materials in Electronics;2018-03-31

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