Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-40120-9.pdf
Reference40 articles.
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2. Tsai, Y. L. et al. Bridging the “green gap” of LEDs: giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals. Nanoscale 8, 1192 (2015).
3. Narukawa, Y. White light emitting diodes with super-high luminous efficacy. J. Phys. D: Appl. Phys. 43, 354002 (2010).
4. Jiang, Y. et al. Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range. Sci. Rep. 5, 10883 (2015).
5. Massabuau, C. P. et al. Carrier Localization in the Vicinity of Dislocations in InGaN. J. Appl. Phys. 121, 013104 (2017).
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