Single crystalline SiGe layers on Si by solid phase epitaxy
Author:
Funder
Australian Research Council
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
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2. Optimization of SiGe selective epitaxy for source/drain engineering in 22nm node CMOS;Wang;J. Appl. Phys.,2013
3. Silicon-germanium multi-quantum well photodetectors in the near infrared;Onaran;Opt. Express,2012
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1. Tensile-strained Ge1−x Sn x layers on Si(001) substrate by solid-phase epitaxy featuring seed layer introduction;Japanese Journal of Applied Physics;2024-04-01
2. In-situ Measurement of Self-Atom Diffusion in Solids Using Amorphous Germanium as a Model System;Scientific Reports;2018-12
3. Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate;Advances in Condensed Matter Physics;2018-08-07
4. Nanocrystal growth of single-phase Si 1−x Ge x alloys;Journal of Physics and Chemistry of Solids;2016-06
5. Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing;Japanese Journal of Applied Physics;2016-05-20
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