Determination of composition of non-homogeneous GaInNAs layers-Reference-Cited by-同舟云学术

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Determination of composition of non-homogeneous GaInNAs layers

Published:2016-01 Issue: Volume:433 Page:105-113
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pucicki D.,Bielak K.,Ściana B.,Radziewicz D.,Latkowska-Baranowska M.,Kováč J.,Vincze A.,Tłaczała M.

Funder

Politechnika Wrocławska

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference43 articles.

1. MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications;Ściana;Cryst. Res. Technol.,2012

2. GaInNAs-based high-power and tapered laser diodes for pumping applications;Bisping;IEEE J. Sel. Top. Quantum Electron.,2009

3. Monolitic CVSEL with InGaAsN active region emitting at 1.28μm and CW output power exceeding 500μW at room temperature;Steinle;Electron. Lett.,2001

4. Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diode at 1.5μm;Bisping;Electron. Lett.,2008

5. Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6μm;Bisping;J. Cryst. Growth,2009

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast and efficient approach for multi-component quantum wells analysis based on FFT;Measurement;2021-12

2. Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers;Semiconductor Science and Technology;2020-10-06

3. Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties;Journal of Materials Science: Materials in Electronics;2019-08-10

4. GaInNas/GaAs QW Based Structures to Compensate Parasitic Effect of Quantum-Confined Stark Effect in Photodetector Applications;Advances in Electrical and Electronic Engineering;2018-09-24

5. Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques;Applied Surface Science;2018-03

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