MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications

Author:

Ściana B.,Radziewicz D.,Pucicki D.,Zborowska-Lindert I.,Serafińczuk J.,Tłaczała M.,Latkowska M.,Kováč J.,Srnanek R.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference10 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. S. R. Kurtz D. Meyers J. M. Olson in: Proceedings of the 26 th IEEE Photovoltaic Specialists Conference, Anahein (IEEE, New York, USA, 1997), pp. 875-878.

3. Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen

4. B. Ściana D. Pucicki D. Radziewicz J. Serafińczuk B. Paszkiewicz A. Szyszka M. Tłaczała P. Poloczek G. Sęk R. Srnanek J. Kovac in: Proceedings of 12th European Workshop on Metalorganic Vapour Phase Epitaxy (Bratislava, Slovakia, 2007), pp. 109-112.

5. Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition

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