Thermal annealing effect on the structural properties of epitaxial growth of GaP on Si substrate-Reference-Cited by-同舟云学术

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Thermal annealing effect on the structural properties of epitaxial growth of GaP on Si substrate

Published:2015-06 Issue: Volume:419 Page:42-46
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hussein Emad H.,Dadgostar Shabnam,Hatami Fariba,Masselink W.T.

Funder

MoHESR/DAAD Iraqi-German scholarship program

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate

2. Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

3. Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si

4. Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

5. III–V on silicon: Observation of gallium phosphide anti-phase disorder by low-energy electron microscopy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bandgap engineering of low-temperature CdS nanocrystalline prepared on Si(1 1 1) without post-thermal annealing;Materials Today Communications;2020-12

2. Impact of deposition temperature on the structural properties of CdS/Si nanoparticles for nanoelectronics;Materials Letters;2019-11

3. Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells;Applied Physics Express;2017-06-20

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