Low temperature AlN growth by MBE and its application in HEMTs-Reference-Cited by-同舟云学术

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Low temperature AlN growth by MBE and its application in HEMTs

Published:2015-09 Issue: Volume:425 Page:133-137
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Faria Faiza Afroz,Nomoto Kazuki,Hu Zongyang,Rouvimov Sergei,(Grace) Xing Huili,Jena Debdeep

Funder

Multidisciplinary University Research Initiative

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

2. Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

3. Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

4. AlN∕AlGaN∕GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics

5. Improvement of AlGaN∕GaN high electron mobility transistor structures byin situdeposition of a Si3N4 surface layer

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High performance of Ag/AlN/Si Schottky diode: Study of the DC sputtering power effect on its electrical properties;Materials Science and Engineering: B;2024-06

2. Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics;Journal of Materials Science: Materials in Electronics;2024-05

3. Structural and Optical Properties of Aluminium Nitride Thin Films Fabricated Using Pulsed Laser Deposition and DC Magnetron Sputtering on Various Substrates;Advances in Materials Science;2024-03-01

4. The evolution of preferred orientation and morphology of AlN films under various sputtering parameters;Journal of Crystal Growth;2024-01

5. Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications;Microelectronics Journal;2023-10

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