Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors-Reference-Cited by-同舟云学术

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Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

Published:2004-02 Issue:2 Volume:48 Page:363-366
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hwang Jeonghyun,Schaff William J.,Green Bruce M.,Cha Hoyoung,Eastman Lester F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

3. Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors

4. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

5. Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

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1. Study of the effect of experimental conditions on atomic layer deposition of aluminum nitride films;Highlights in Science, Engineering and Technology;2023-07-09

2. Sub-bandgap photon-assisted electron trapping and detrapping in AlGaN/GaN heterostructure field-effect transistors;Physica Scripta;2023-05-26

3. Fabrication and characterization of AlN metal–insulator–semiconductor grown Si substrate;Modern Physics Letters B;2017-11-27

4. AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation;Japanese Journal of Applied Physics;2016-06-10

5. Low Interface Trap Density and High Breakdown Electric Field SiN Films on GaN Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition;IEEE Transactions on Electron Devices;2016-04

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