Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(111) substrates by using hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(111) substrates by using hydride vapor phase epitaxy

Published:2010-07 Issue:14 Volume:312 Page:2038-2043
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee Sanghwa,Oh Taegeon,Shin Boa,Kim Chinkyo,Ryeol Lee Dong,Lee Hyun-Hwi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

4. Defect structure in selectively grown GaN films with low threading dislocation density

5. Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers

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2. Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability;Nanotechnology;2012-09-14

3. Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE;Crystal Growth & Design;2012-04-10

4. Crystal Orientation of GaN Nanostructures Grown on Al$_{2}$O$_{3}$ and Si(111) with a Zr Buffer Layer;Japanese Journal of Applied Physics;2012-01-20

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