Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE-Reference-Cited by-同舟云学术

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Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Published:2012-04-10 Issue:5 Volume:12 Page:2251-2256
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Lekhal K.¹²,André Y.¹²,Trassoudaine A.¹²,Gil E.¹²,Avit G.¹²,Cellier J.³,Castelluci D.¹²

Affiliation:

1. Clermont Université, Université Blaise Pascal, LASMEA, BP 10448, F-63000 Clermont-Ferrand, France

2. CNRS, UMR6602, LASMEA F-63177 Aubière, France

3. Clermont Université, Université Blaise Pascal, Laboratoire des Matériaux Inorganiques, CNRS UMR 6002, F-63171 AUBIERE, France

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg201484q

Reference36 articles.

1. Revised Erratum to “Key inventions in the history of nitride-based blue LED and LD” Isamu Akasaki [J. Crystal Growth 300 (2007) 2–10]

2. Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods

3. Strong luminescence from dislocation-free GaN nanopillars

4. Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires

5. Direct observation of the core structures of threading dislocations in GaN

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1. Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources;ACS Omega;2020-10-08

2. Achieving Ultra-long GaN Nanorod Growth by Lowering Nucleation Energy Via Surface Modification for Optical Sensors;ACS Applied Nano Materials;2020-08-12

3. Simple route to fabricate nanowire-assembled 3D AlGaN nanourchins by chemical vapour deposition;Ceramics International;2018-08

4. Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy;Nanomaterials;2018-04-07

5. Pole figure measurement of the initial growth of GaN nanoneedles on GaN/Si(111) by using hydride vapor phase epitaxy;Journal of the Korean Physical Society;2016-09

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