Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability-Reference-Cited by-同舟云学术

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Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

Published:2012-09-14 Issue:40 Volume:23 Page:405601
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lekhal K,Avit G,André Y,Trassoudaine A,Gil E,Varenne C,Bougerol C,Monier G,Castelluci D

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=40/a=405601/pdf

Reference36 articles.

1. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

2. Coaxial Group III−Nitride Nanowire Photovoltaics

3. Self-Organized GaN Quantum Wire UV Lasers

4. Hydrogen sensing with Pt-functionalized GaN nanowires

5. Ultrasensitive in Situ Label-Free DNA Detection Using a GaN Nanowire-Based Extended-Gate Field-Effect-Transistor Sensor

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1. Homogeneous and well-aligned GaN nanowire arrays via a modified HVPE process and their cathodoluminescence properties;Nanoscale;2022

2. Fabrication of GaN nanowires containing n+-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment;Applied Physics Express;2021-10-29

3. GaN Nanowire Growth Promoted by In–Ga–Au Alloy Catalyst with Emphasis on Agglomeration Temperature and In Composition;ACS Omega;2021-01-22

4. Mask-free three-dimensional epitaxial growth of III-nitrides;Journal of Materials Science;2020-10-01

5. Dynamics of Gold Droplet Formation on SiO2/Si(111) Surface;The Journal of Physical Chemistry C;2020-05-06

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