1. Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
2. P. Perlin, M. Leszczyński, P. Prystawko, R. Czernecki, P. Wiśniewski, J.L. Weyher, G. Nowak, J. Borysiuk, L. GorczycaT. Świetlik, G. Franssen, A. Bering, C. Skierbiszewski, I. Grzegory, T. Suski and S. Porowski, , in: Proceedings of Photonics West 2004, San Jose, CA, USA.
3. I. Grzegory, M. Boćkowski, S. Porowski, in: P. Capper (Ed.), Bulk Crystal Growth of Electronic, Optical & Optoelectronic Materials, UK, 2005, pp. 173–207 (chapter 6).
4. GaN crystallization by the high-pressure solution growth method on HVPE bulk seed
5. Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates