Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method-Reference-Cited by-同舟云学术

Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

Published:2013-05-28 Issue:20 Volume:113 Page:203513
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gogova D.,Petrov P. P.,Buegler M.,Wagner M. R.,Nenstiel C.,Callsen G.,Schmidbauer M.,Kucharski R.,Zajac M.,Dwilinski R.,Phillips M. R.,Hoffmann A.,Fornari R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4807581

Reference34 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

4. Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

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