Space arrangement of Ge nanoislands formed by growth of Ge on pit-patterned Si substrates
Author:
Funder
RFBR
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis
2. Ge quantum dot molecules and crystals: Preparation and properties
3. Self-assembly and ordering mechanisms of Ge islands on prepatterned Si(001)
4. New empirical approach for the structure and energy of covalent systems
5. Epitaxy on surfaces vicinal to Si(001). I. Diffusion of silicon adatoms over the terraces
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1. Langmuir films—a universal method for fabricating organized monolayers from nanomaterials;Materials Nanoarchitectonics;2024
2. Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms;Nanotechnologies in Russia;2015-03
3. Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography;Applied Physics Letters;2014-10-13
4. Optimization tools of parallel simulation of nanostructures with quantum dots;Optoelectronics, Instrumentation and Data Processing;2014-05
5. Formation of germanium nanoislands on pit-patterned silicon substrates by means of the molecular dynamics method;Optoelectronics, Instrumentation and Data Processing;2014-05
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