Temperature effects during the growth of InxGa1−xN films through the whole compositional range by plasma-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
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3. Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substrates;Shanabrook;Appl. Phys. Lett.,1992
4. Substrate temperature changes during molecular beam epitaxy growth of GaMnAs;Novák;J. Appl. Phys.,2007
5. Indium nitride (InN): a review on growth, characterization, and properties;Bhuiyan;J. Appl. Phys.,2003
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