Substrate temperature changes during molecular beam epitaxy growth of GaMnAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2800798
Reference12 articles.
1. Making Nonmagnetic Semiconductors Ferromagnetic
2. Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers
3. The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers
4. Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy
5. Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substrates
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3. Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers;Journal of Crystal Growth;2014-09
4. III–V-Based Ferromagnetic Semiconductors;Nanomagnetism and Spintronics;2014
5. Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure;Applied Physics Letters;2013-09-30
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