Intersubband transition at 1.55μm in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770°C
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. Carrier relaxation dynamics in an ultrafast all-optical modulator using an intersubband transition
2. Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells
3. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
4. Calculation of Near-Infrared Intersubband Absorption Spectra in GaN/AlN Quantum Wells
5. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of polarization on intersubband transitions of AlxGa1−xN/GaN multi-quantum wells;Chinese Physics B;2013-05
2. Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition;Journal of Applied Physics;2012-09-15
3. Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures;Physical Review B;2011-12-16
4. Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy;Applied Physics Letters;2011-10-10
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