Step-flow growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using ZnCl2 and H2O source gases
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Doping of β‐Ga 2 O 3 Layers by Zn Using Halide Vapor‐Phase Epitaxy Process;physica status solidi (a);2021-09-09
2. Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3;Journal of Semiconductors;2019-01
3. Polarity in GaN and ZnO: Theory, measurement, growth, and devices;Applied Physics Reviews;2016-12
4. Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy;Journal of Crystal Growth;2014-11
5. Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers;Japanese Journal of Applied Physics;2012-03-05
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