Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes-Reference-Cited by-同舟云学术

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Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

Published:2010-12 Issue:1 Volume:313 Page:1-7
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Farrell R.M.,Haeger D.A.,Chen X.,Iza M.,Hirai A.,Kelchner K.M.,Fujito K.,Chakraborty A.,Keller S.,DenBaars S.P.,Speck J.S.,Nakamura S.

Funder

Solid State Lighting and Energy Center

Defense Advanced Research Projects Agency

National Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

4. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

5. Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle;Optical Materials Express;2021-12-14

2. Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis;Journal of Applied Physics;2020-11-14

3. Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes;Optics Express;2020-07-15

4. Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes;physica status solidi (a);2019-12-23

5. Dependence of thermal stability of GaN on substrate orientation and off-cut;Japanese Journal of Applied Physics;2019-05-20

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