Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes

Published:2019-12-23 Issue:7 Volume:217 Page:1900757
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Aragon Andrew¹^ORCID,Monavarian Morteza¹,Stricklin Isaac¹,Pickrell Greg²,Crawford Mary³,Allerman Andrew⁴,Armstrong Andrew M.²,Feezell Daniel¹

Affiliation:

1. Center for High-Technology Materials The University of New Mexico Albuquerque NM 87106 USA

2. Semiconductor Material and Device Sciences Sandia National Laboratories Albuquerque NM 87123 USA

3. Material, Physical, and Chemical Sciences Sandia National Laboratories Albuquerque NM 87123 USA

4. Advanced Materials Science Sandia National Laboratories Albuquerque NM 87123 USA

Funder

Advanced Research Projects Agency - Energy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900757

Reference27 articles.

1. Vertical GaN Power Diodes With a Bilayer Edge Termination

2. Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications

3. Vertical Power p-n Diodes Based on Bulk GaN

4. 400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

5. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

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