Orientation control of GaN and grown on sapphire by metal-organic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Nitride emitters go nonpolar
2. Comparison between Polar (0001) and Semipolar (11\bar22) Nitride Blue–Green Light-Emitting Diodes Grown onc- andm-Plane Sapphire Substrates
3. Impact of Substrate Miscut on the Characteristic ofm-plane InGaN/GaN Light Emitting Diodes
4. Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
5. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates
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2. Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD;Semiconductor Science and Technology;2023-02-06
3. Evaluations of the microstructures at the interface between the semipolar (101̄3) AlN epilayer and the m-plane (101̄0) sapphire substrate;CrystEngComm;2023
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