Selective etching of dislocations in GaN grown by low-pressure solution growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Wet etching of GaN, AlN, and SiC: a review
2. Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers
3. Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods
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5. Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching
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1. Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals;Materials;2022-10-09
2. Statistical investigation of dislocation induced leakage current paths in AlGaN/GaN HEMT structures on Si and the impact of growth conditions;Applied Physics Express;2022-08-12
3. Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures;AIP Advances;2020-04-01
4. Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades;Crystal Research and Technology;2019-09-30
5. Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed;Japanese Journal of Applied Physics;2019-05-14
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