Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes
3. AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique
4. Al concentration control of epitaxial AlGaN alloys and interface control of GaN/AlGaN quantum well structures
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1. The Study on AlxGa1-xN Film Deposition by Radio Frequency Magnetron Sputtering;Journal of Physics: Conference Series;2021-04-01
2. Self-Organization of the Composition of AlxGa1 – xN Films Grown on Hybrid SiC/Si Substrates;Physics of the Solid State;2021-03
3. Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE;physica status solidi (b);2016-02-15
4. Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening;Electronic Materials Letters;2015-06-30
5. HVPE growth of AlXGa1-XN templates for UV-LED applications;SPIE Proceedings;2015-03-13
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