The Study on AlxGa1-xN Film Deposition by Radio Frequency Magnetron Sputtering

Abstract

Abstract A series of AlxGa1-xN films are deposited on Si (111) substrates by radio frequency magnetron sputter with different experimental Parameters. Crystallinities, elemental components and surface morphologies of films are investigated in terms of their deposition Parameters. The results reveal that the films grow along with the (004) crystal direction and have a more Al component than the target, which is attributed to the higher bond energy of Al-N. A higher pressure and nitrogen concentration lead to more surface structures such as bubbles on the AlxGa1-xN films. Using a pressure of 1.0 Pa and nitrogen concentration of 33%, AlxGa1-xN films with good quality are finalized achieved.