AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique-Reference-Cited by-同舟云学术

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

Published:2009-03 Issue:7 Volume:311 Page:2080-2083
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jmerik V.N.,Shubina T.V.,Mizerov A.M.,Belyaev K.G.,Sakharov A.V.,Zamoryanskaya M.V.,Sitnikova A.A.,Davydov V.Yu.,Kop’ev P.S.,Lutsenko E.V.,Rzheutskii N.V.,Danilchik A.V.,Yablonskii G.P.,Ivanov S.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. 247 nm Ultra-Violet Light Emitting Diodes

3. Unique optical properties of AlGaN alloys and related ultraviolet emitters

4. Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes

5. Growth of AlGaN alloys exhibiting enhanced luminescence efficiency

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