Optimization of a-plane InN grown via MOVPE on a-plane GaN buffer layers on r-plane sapphire-Reference-Cited by-同舟云学术

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Optimization of a-plane InN grown via MOVPE on a-plane GaN buffer layers on r-plane sapphire

Published:2010-07 Issue:14 Volume:312 Page:2033-2037
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Laskar Masihhur R.,Kadir Abdul,Rahman A.A.,Shah A.P.,Hatui Nirupam,Gokhale M.R.,Bhattacharya Arnab

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77eV) InN grown on GaN/sapphire using pulsed MOVPE

3. MOVPE growth of InN films and quantum dots

4. Growth of InN by vertical flow MOVPE

5. Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOVPE growth of semipolar III-nitride semiconductors on CVD graphene;Journal of Crystal Growth;2013-06

2. MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers;Journal of Crystal Growth;2011-03

3. Growth of semi-polar InN layer on GaAs (110) surface by MOVPE;Journal of Crystal Growth;2011-03

4. Influence of buffer layers on the microstructure of MOVPE grown a-plane InN;Journal of Crystal Growth;2011-01

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