Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor-Reference-Cited by-同舟云学术

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Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor

Published:2007-01 Issue: Volume:298 Page:403-408
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kadir Abdul,Ganguli Tapas,Gokhale M.R.,Shah A.P.,Chandvankar S.S.,Arora B.M.,Bhattacharya Arnab

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. MOVPE growth and photoluminescence of wurtzite InN

3. MOVPE growth of InN with ammonia on sapphire

4. MOVPE growth of InN films and quantum dots

5. In-plane imperfections in GaN studied by x-ray diffraction

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor;Journal of Crystal Growth;2024-07

2. A CFD study of the gas reaction path in growth of InN films in metal–organic chemical vapor deposition;Journal of Crystal Growth;2024-01

3. Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth;Applied Surface Science;2018-01

4. Morphology evolution of nano-structured InN grown by MOMBE;Journal of Materials Science: Materials in Electronics;2015-04-02

5. MOVPE growth of semipolar III-nitride semiconductors on CVD graphene;Journal of Crystal Growth;2013-06

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