MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers-Reference-Cited by-同舟云学术

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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers

Published:2011-03 Issue:1 Volume:319 Page:114-117
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhang Biao,Song Huaping,Wang Jun,Jia Caihong,Liu Jianming,Xu Xiaoqing,Liu Xianglin,Yang Shaoyan,Zhu Qinsheng,Wang Zhanguo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

3. Evidence forp-Type Doping of InN

4. Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces

5. Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, Electrical and Optical Properties of Sputtered-Grown InN Films on ZnO Buffered Silicon, Bulk GaN, Quartz and Sapphire Substrates;Journal of Electronic Materials;2018-05-22

2. Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer;Materials Science in Semiconductor Processing;2017-11

3. Low-RF-power growth of InN thin films by plasma-assisted reactive evaporation with a localized ion source;Materials Chemistry and Physics;2017-09

4. Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions;Thin Solid Films;2015-08

5. X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD;SPIE Proceedings;2015-03-13

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