Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. The origin of stress reduction by low-temperature AlN interlayers;Bläsing;Applied Physics Letters,2002
2. Thermal stability of GaN on (111) Si substrate;Ishikawa;Journal of Crystal Growth,1998
3. GaN on Si substrate with AlGaN/AlN intermediate layer;Ishikawa;Japanese Journal of Applied Physics,1999
4. High-quality GaN on Si substrate using AlGaN/AlN intermediate layer;Ishikawa;Physica Status Solidi (a),1999
5. Influence of the thickness of the 1st GaN layer under a low-temperature AlN interlayer on the properties of GaN layer grown on Si (111);Kim;Journal of Crystal Growth,2010
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD;Semiconductor Science and Technology;2023-02-22
2. High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer;Journal of Alloys and Compounds;2018-01
3. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2017
4. Growth behavior of hexagonal GaN on Si(100) and Si(111) substrates prepared by pulsed laser deposition;Japanese Journal of Applied Physics;2016-08-02
5. GaN-based light-emitting diodes on various substrates: a critical review;Reports on Progress in Physics;2016-04-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3