Differences in nucleation and properties of InN islands formed using two different deposition procedures-Reference-Cited by-同舟云学术

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Differences in nucleation and properties of InN islands formed using two different deposition procedures

Published:2010-10 Issue:21 Volume:312 Page:3096-3100
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Laboutin Oleg,Johnson Wayne,Welser Roger

Funder

National Aeronautics Space Administration (NASA)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Indium nitride quantum dots grown by metalorganic vapor phase epitaxy

2. MOVPE growth and photoluminescence of wurtzite InN

3. Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

4. Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

5. InN island shape and its dependence on growth condition of molecular-beam epitaxy

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1. Quantum well and quantum dot energy harvesting devices;Energy Harvesting and Storage: Materials, Devices, and Applications II;2011-05-13

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