Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE-Reference-Cited by-同舟云学术

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Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

Published:2010-09 Issue:18 Volume:312 Page:2542-2550
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bohnen Tim,Ashraf Hina,van Dreumel Gerbe W.G.,Verhagen Sjoerd,Weyher Jan L.,Hageman Paul R.,Vlieg Elias

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Substrates for gallium nitride epitaxy;Liu;Mater. Sci. Eng. R,2002

2. GaN crystallization by the high-pressure solution growth method on HVPE bulk seed;Bockowski;J. Cryst. Growth,2008

3. Crystal growth of GaN by ammonothermal method;Yoshikawa;J. Cryst. Growth,2004

4. Bulk GaN crystals grown by HVPE;Fujito;J. Cryst. Growth,2009

5. CFD optimisation of up-flow vertical HVPE reactor for GaN growth;Sytniewski;J. Cryst. Growth,2008

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydride vapor phase epitaxy for gallium nitride substrate;Journal of Semiconductors;2019-10-01

2. Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth;Japanese Journal of Applied Physics;2019-05-28

3. Growth of Bulk GaN from Gas Phase;Crystal Research and Technology;2018-03-12

4. Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics;Integrated Circuits and Systems;2018

5. GaN Layer Grown by Hydride Vapor Phase Epitaxy: Influence of the Reactor Pressure;Advanced Materials Research;2012-09

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